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DG2535/DG2536
New Product
Vishay Siliconix
0.35-W Low-Voltage Dual SPDT Analog Switch
FEATURES
D D D D D D Low Voltage Operation Low On-Resistance - rON: 0.35 W @ 2.7 V -69 dB OIRR @ 2.7 V, 100 kHz MSOP-10 and DFN-10 Packages ESD Protection >2000 V Latch-Up Current >300 mA (JESD 78)
BENEFITS
D D D D D Reduced Power Consumption High Accuracy Reduce Board Space 1.8-V Logic Compatible High Bandwidth
APPLICATIONS
D D D D D D Cellular Phones Speaker Headset Switching Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems Relay Replacement
DESCRIPTION
The DG2535/DG2536 is a sub 1-W (0.35 W @ 2.7 V ) dual SPDT analog switches designed for low voltage applications. The DG2535/DG2536 has on-resistance matching (less than 0.05 W @ 2.7 V) and flatness (less than 0.2 W @ 2.7 V) that are guaranteed over the entire voltage range. Additionally, low logic thresholds make the DG2535/DG2536 an ideal interface to low voltage DSP control signals. The DG2535/DG2536 has fast switching speed with break-before-make guaranteed. In the On condition, all switching elements conduct equally in both directions. Off-isolation and crosstalk is -69 dB @ 100 kHz. The DG2535/DG2536 is built on Vishay Siliconix's high-density low voltage CMOS process. An eptiaxial layer is built in to prevent latchup. The DG2535/DG2536 contains the additional benefit of 2,000-V ESD protection. In space saving MSOP-10 and DFN-10 lead (Pb)-free packages, the DG2535/DG2536 are high performance, low rON switches for battery powered applications. No lead (Pb) is used in the manufacturing process either inside the device/package or on the external terminations. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured in DFN packages, the lead (Pb)-free "-E3/E4" suffix is being used as a designator. Lead (Pb)-free DFN products purchased at any time will have either a nickel-palladium-gold device termination or a 100% matte tin device termination. The different lead (Pb)-free materials are interchangeable and meet all JEDEC standards for reflow and MSL rating.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2535
V+ NO1 COM1 IN1 NC1 1 2 3 4 5 Top View 10 9 8 7 6 NO2 COM2 IN2 NC2 GND
TRUTH TABLE Logic
0 1
NC1 and NC2
ON OFF
NO1 and NO2
OFF ON
DG2536
V+ NC1 COM1 IN1 NO1 1 2 3 4 5 Top View 10 9 8 7 6 NC2 COM2 IN2 NO2 GND -40 to 85C 40 DFN-10
ORDERING INFORMATION Temp Range Package
MSOP-10
Part Number
DG2535DQ-T1--E3 DG2536DQ-T1--E3 DG2535DN-T1--E3/E4 DG2536DN-T1--E3/E4
Document Number: 72939 S-41967--Rev. B, 01-Nov-04
www.vishay.com
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DG2535/DG2536
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (NO, NC, COM) . . . . . . . . . . . . . . . . . . . . . . . "300 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "500 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150C ESD per Method 3015.7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2 kV
New Product
Power Dissipation (Packages)b MSOP-10c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW DFN-10d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1191 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/_C above 70_C d. Derate 14.9 mW/_C above 70_C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3 V)
Test Conditions Otherwise Unless Specified Parameter Analog Switch
Analog Signal Ranged On-Resistance rON Flatnessd On-Resistance Match Between Channelsd VNO, VNC, VCOM rON rON Flatness DrDS(on) INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 3.3 V, VNO, VNC = 0.3 V/3 V VCOM = 3 V/0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/3 V V+ 2 7 V V = 2.7 V, VCOM = 0 6/1 5 V 0.6/1.5 INO, INC = 100 mA Full Room Full Room Room Room Full Room Full Room Full -1 -10 -1 -10 -1 -10 0 0.35 0.09 V+ 0.5 0.6 0.2 0.05 1 10 1 10 1 10 nA W V
Limits
-40 to 85_C
Symbol
V+ = 3 V, "10%, VIN = 0.5 or 1.4 Ve
Tempa
Minb
Typc
Maxb
Unit
Switch Off Leakage Current
Digital Control
Input High Voltaged Input Low Voltage Input Capacitance Input Current
VINH
Full Full Full VIN = 0 or V+ Full
1.4 0.5 10 1 1
VINL
Cin
V pF mA
IINL or IINH
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injectiond Off-Isolationd Crosstalkd NO, NC Off Capacitanced Channel-On Channel On Capacitanced tON VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF 20V W tOFF td QINJ OIRR XTALK CNO(off) CNC(off) CNO(on) CNC(on) VIN = 0 or V+ f = 1 MHz V+, VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF CL = 1 nF, VGEN = 1.5 V, RGEN = 0 W RL = 50 W CL = 5 pF f = 100 KHz W, pF, Room Full Room Full Full Room Room Room Room Room Room Room 1 52 43 6 21 -69 -69 145 145 406 406 pF pC dB 82 90 73 78 ns
Power Supply
Power Supply Current I+ VIN = 0 or V+ Full 1.0 mA Notes: a. Room = 25C, Full = as determined by the operating suffix. b. Typical values are for design aid only, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Guarantee by design, nor subjected to production test. e. VIN = input voltage to perform proper function. www.vishay.com Document Number: 72939 S-41967--Rev. B, 01-Nov-04
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DG2535/DG2536
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM and Supply Voltage
0.7 0.6 r ON - On-Resistance ( W ) 0.5 0.4 0.3 0.2 0.1 0.0 0.0 V+ = 3.3 V V+ = 1.8 V V+ = 2.0 V V+ = 2.7 V V+ = 3.0 V T = 25_C IA = 100 mA r ON - On-Resistance ( W ) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 V+ = 3.0 V IS = 100 mA
Vishay Siliconix
rON vs. Analog Voltage and Temperature (NC1)
85_C -40_C 25_C
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
1.0
1.5
2.0
2.5
3.0
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
Supply Current vs. Temperature
100000 V+ = 3.0 V VIN = 0 V I+ - Supply Current (A) 100 mA 10 mA 1 mA 100 mA 10 mA 1 mA 100 nA 10 nA 10 Temperature (_C) 1 nA
Supply Current vs. Input Switching Frequency
V+ = 3 V
10000 I+ - Supply Current (nA)
1000
100
10
100
1K
10 K
100 K
1M
10 M
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
10000 V+ = 3.0 V 1000 Leakage Current (pA) ICOM(on) ICOM(off) Leakage Current (pA) 300 250 200 150 100 50 0 -50 -100 -150 -200 -250 1 -60 -40 -20 0 20 40 60 80 100 -300 0.0 0.5
Leakage vs. Analog Voltage
V+ = 3.0 V ICOM(on) INO(off), INC(off)
100
10
INO(off), INC(off)
ICOM(off)
1.0
1.5
2.0
2.5
3.0
Temperature (_C)
VCOM - Analog Voltage (V)
Document Number: 72939 S-41967--Rev. B, 01-Nov-04
www.vishay.com
3
DG2535/DG2536
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
100 90 t ON / t OFF - Switching Time (ns) 80 70 60 50 40 30 20 10 0 -60 -90 -40 -20 0 20 40 60 80 100 100 K 1M 10 M Frequency (Hz) 100 M 1G Temperature (_C) tOFF V+ = 2 V tON V+ = 3 V tOFF V+ = 3 V
Switching Time vs. Temperature
10 tON V+ = 2 V Loss, OIRR, X TALK (dB)
Insertion Loss, Off-Isolation Crosstalk vs. Frequency
-10
Loss
-30
XTALK
OIRR
-50 V+ = 3.0 V RL = 50 W -70
Switching Threshold vs. Supply Voltage
2.00 1.75 Q - Charge Injection (pC) 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0 1 2 3 4 5 6 V+ - Supply Voltage (V) 300 250 200 150 100 50 0 -50 -100 -150 -200 -250 -300 0.0
Charge Injection vs. Analog Voltage
- Switching Threshold (V)
V+ = 2.0 V V+ = 3.0 V
VT
0.5
1.0
1.5
2.0
2.5
3.0
VCOM - Analog Voltage (V)
TEST CIRCUITS
V+ Logic Input V+ Switch Input NO or NC IN Logic Input GND 0V CL (includes fixture and stray capacitance) VOUT + VCOM R L ) R ON RL RL 300 W CL 35 pF COM Switch Output VOUT Switch Output 0V tON tOFF VINH 50% VINL 0.9 x VOUT tr t 5 ns tf t 5 ns
Logic "1" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense.
FIGURE 1. Switching Time
www.vishay.com Document Number: 72939 S-41967--Rev. B, 01-Nov-04
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DG2535/DG2536
New Product
TEST CIRCUITS
V+ Logic Input COM VO RL 300 W GND CL 35 pF VINH VINL tr t 5 ns tf t 5 ns
Vishay Siliconix
V+ VNO VNC NO NC IN
VNC = VNO VO Switch 0V Output
90%
tD
tD
CL (includes fixture and stray capacitance)
FIGURE 2. Break-Before-Make Interval
V+ VOUT Rgen + VIN = 0 - V+ V+ NC or NO IN GND COM VOUT CL = 1 nF IN On Off Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. On DVOUT
FIGURE 3. Charge Injection
V+ 10 nF V+ NC or NO IN COM COM 0V, 2.4 V IN NC or NO GND 10 nF V+ COM
V+
0 V, 2.4 V GND
Meter HP4192A Impedance Analyzer or Equivalent f = 1 MHz
RL Analyzer
VCOM Off Isolation + 20 log V NO NC
FIGURE 4. Off-Isolation
FIGURE 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72939. Document Number: 72939 S-41967--Rev. B, 01-Nov-04 www.vishay.com
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